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1. product pro?le 1.1 general description ultra low capacitance electrostatic discharge (esd) protection array in a small sot23 (to-236ab) surface-mounted device (smd) plastic package designed to protect one signal line in rail-to-rail con?guration from the damage caused by esd and other transients. 1.2 features n esd protection of one signal line (rail-to-rail con?guration) n ultra low diode capacitance: c d = 0.6 pf n very low reverse leakage current: 30 na n esd protection up to 30 kv n iec 61000-4-2; level 4 (esd) n iec 61000-4-5 (surge); i pp = 11 a at t p = 8/20 m s n aec-q101 quali?ed 1.3 applications n telecommunication networks n video line protection n microcontroller protection n i 2 c-bus protection n antenna power supply n analog audio n class-d ampli?er 1.4 quick reference data NUP1301 ultra low capacitance esd protection array rev. 01 11 may 2009 product data sheet table 1. quick reference data t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v rrm repetitive peak reverse voltage --80v c d diode capacitance f = 1 mhz; v r =0v - 0.6 0.75 pf i r reverse current v r = 80 v - - 100 na
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 2 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array 2. pinning information 3. ordering information 4. marking [1] * = -: made in hong kong * = p: made in hong kong * = t: made in malaysia * = w: made in china 5. limiting values table 2. pinning pin symbol description simpli?ed outline graphic symbol 1 gnd ground 2v cc supply voltage 3 i/o input/output 12 3 006aaa763 12 3 table 3. ordering information type number package name description version NUP1301 - plastic surface-mounted package; 3 leads sot23 table 4. marking type number marking code [1] NUP1301 lj* table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per diode v rrm repetitive peak reverse voltage -80v v r reverse voltage - 80 v i f forward current [1] - 215 ma i frm repetitive peak forward current t p 1 ms; d 0.25 - 500 ma
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 3 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array [1] pulse test: t p 300 m s; d 0.02. [2] t j =25 c prior to surge. [3] non-repetitive current pulse 8/20 m s exponential decay waveform according to iec 61000-4-5. [4] measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected). [5] single diode loaded. [6] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [1] device stressed with ten non-repetitive esd pulses. [2] measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected). i fsm non-repetitive peak forward current square wave [2] t p =1 m s-4a t p =1ms - 1 a t p = 1 s - 0.5 a per device p pp peak pulse power t p = 8/20 m s [3] [4] - 220 w i pp peak pulse current t p = 8/20 m s [3] [4] -11a p tot total power dissipation t amb 25 c [5] [6] - 250 mw t j junction temperature - 150 c t amb ambient temperature - 55 +150 c t stg storage temperature - 65 +150 c table 6. esd maximum ratings symbol parameter conditions min max unit v esd electrostatic discharge voltage iec 61000-4-2 (contact discharge) [1] [2] -30kv machine model - 400 v mil-std-883 (human body model) -10kv table 7. esd standards compliance standard conditions iec 61000-4-2; level 4 (esd) > 15 kv (air); > 8 kv (contact) mil-std-883; class 3b (human body model) > 8 kv table 5. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 4 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array 6. thermal characteristics [1] single diode loaded. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. fig 1. 8/20 m s pulse waveform according to iec 61000-4-5 fig 2. esd pulse waveform according to iec 61000-4-2 t ( m s) 040 30 10 20 001aaa630 40 80 120 i pp (%) 0 e - t 100 % i pp ; 8 m s 50 % i pp ; 20 m s 001aaa631 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 ns to 1 ns table 8. thermal characteristics symbol parameter conditions min typ max unit per device r th(j-a) thermal resistance from junction to ambient in free air [1] [2] - - 500 k/w r th(j-sp) thermal resistance from junction to solder point - - 360 k/w
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 5 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array 7. characteristics [1] pulse test: t p 300 m s; d 0.02. [2] non-repetitive current pulse 8/20 m s exponential decay waveform according to iec 61000-4-5. [3] measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected). table 9. electrical characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit per diode v br breakdown voltage i r = 100 m a 100 - - v v f forward voltage [1] i f = 1 ma - - 715 mv i f = 10 ma - - 855 mv i f =50ma --1v i f = 150 ma - - 1.25 v i r reverse current v r =25v --30na v r = 80 v - - 100 na v r =25v; t j = 150 c --25 m a v r =80v; t j = 150 c --35 m a c d diode capacitance f = 1 mhz; v r = 0 v - 0.6 0.75 pf per device v cl clamping voltage i pp =1a [2] [3] --3v i pp =11a [2] [3] --20v
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 6 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array (1) t amb = 150 c (2) t amb =85 c (3) t amb =25 c (4) t amb = - 40 c based on square wave currents. t j =25 c; prior to surge fig 3. forward current as a function of forward voltage; typical values fig 4. non-repetitive peak forward current as a function of pulse duration; typical values (1) t amb = 150 c (2) t amb =85 c (3) t amb =25 c (4) t amb = - 40 c t amb =25 c; f = 1 mhz fig 5. reverse current as a function of reverse voltage; typical values fig 6. diode capacitance as a function of reverse voltage; typical values 006aab132 1 10 10 2 10 3 i f (ma) 10 - 1 v f (v) 0 1.4 1.0 0.4 0.8 0.2 1.2 0.6 (1) (2) (3) (4) mbg704 10 1 10 2 i fsm (a) 10 - 1 t p ( m s) 110 4 10 3 10 10 2 006aab133 10 2 i r ( m a) v r (v) 0 100 80 40 60 20 10 1 10 - 1 10 - 2 10 - 3 10 - 4 10 - 5 (1) (2) (3) (4) 0816 12 4 0.8 0.6 0 0.4 0.2 mbg446 v r (v) c d (pf )
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 7 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array fig 7. esd clamping test setup and waveforms 006aab567 50 w r z c z dut (device under test) gnd 450 w rg 223/u 50 w coax esd tester acc. to iec 61000-4-2 c z = 150 pf; r z = 330 w 4 ghz digital oscilloscope 10 attenuator unclamped +8 kv esd pulse waveform (iec 61000-4-2 network) clamped - 8 kv esd pulse waveform (iec 61000-4-2 network) , pin 3 to 1 and 2 vertical scale = 10 a/div horizontal scale = 15 ns/div gnd unclamped - 8 kv esd pulse waveform (iec 61000-4-2 network) vertical scale = 10 a/div horizontal scale = 15 ns/div clamped +8 kv esd pulse waveform (iec 61000-4-2 network), pin 3 to 1 and 2 gnd gnd vertical scale = 10 v/div horizontal scale = 15 ns/div vertical scale = 10 v/div horizontal scale = 15 ns/div
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 8 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array 8. application information protection of a single (high-speed) data line in rail-to-rail con?guration. the protected data line is connected to pin 3. pin 1 is connected to ground (gnd) and pin 2 is connected to the supply rail (supply voltage v cc .) when the transient voltage exceeds the forward voltage drop of one diode, the transient is directed either to the supply rail or to gnd. the advantages of these solutions are: low line capacitance (0.6 pf typically), fast response time, and low clamping voltage. circuit board layout and protection device placement: circuit board layout is critical for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the NUP1301 as close to the input terminal or connector as possible. 2. the path length between the NUP1301 and the protected line should be minimized. 3. keep parallel signal paths to a minimum. 4. avoid running protected conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board (pcb) conductive loops including power and ground loops. 6. minimize the length of the transient return path to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. for multilayer pcbs, use ground vias. 9. test information 9.1 quality information this product has been quali?ed in accordance with the automotive electronics council (aec) standard q101 - stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. fig 8. typical application for the protection of one signal line 006aab568 audio interface d2 NUP1301 d1 NUP1301 v cc v cc
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 9 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array 10. package outline 11. packing information [1] for further information and the availability of packing methods, see section 15 . fig 9. package outline sot23 (to-236ab) 04-11-04 dimensions in mm 0.45 0.15 1.9 1.1 0.9 3.0 2.8 2.5 2.1 1.4 1.2 0.48 0.38 0.15 0.09 12 3 table 10. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 NUP1301 sot23 4 mm pitch, 8 mm tape and reel -215 -235
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 10 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array 12. soldering fig 10. re?ow soldering footprint sot23 (to-236ab) fig 11. wave soldering footprint sot23 (to-236ab) solder lands solder resist occupied area solder paste sot023_fr 0.5 (3 ) 0.6 (3 ) 0.6 (3 ) 0.7 (3 ) 3 1 3.3 2.9 1.7 1.9 2 dimensions in mm solder lands solder resist occupied area preferred transport direction during soldering sot023_fw 2.8 4.5 1.4 4.6 1.4 (2 ) 1.2 (2 ) 2.2 2.6 dimensions in mm
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 11 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array 13. revision history table 11. revision history document id release date data sheet status change notice supersedes NUP1301_1 20090511 product data sheet - -
NUP1301_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 11 may 2009 12 of 13 nxp semiconductors NUP1301 ultra low capacitance esd protection array 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 14.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 14.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. 14.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors NUP1301 ultra low capacitance esd protection array ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 11 may 2009 document identifier: NUP1301_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 16. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 application information. . . . . . . . . . . . . . . . . . . 8 9 test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9.1 quality information . . . . . . . . . . . . . . . . . . . . . . 8 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 11 packing information. . . . . . . . . . . . . . . . . . . . . . 9 12 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 14.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15 contact information. . . . . . . . . . . . . . . . . . . . . 12 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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